Detailed Introduction
3.2T DR8
3dB-bandwidth: 110 GHz
Insertion loss: < 14 dB (Including coupling loss)
Half-wave voltage: < 1.5 V (differential)
DC-ER: > 25 dB
Differential (support AC or DC coupling) or single-ended
1.6T DR8/800G DR4
3dB-bandwidth: 70 GHz
Insertion loss: < 14 dB (Including coupling loss)
Half-wave voltage: < 2 V (differential)
DC-ER: > 25 dB
Differential (support AC or DC coupling) or single-ended
1.6T/800G ZR Coherent PDMIQ
3dB-bandwidth: 70 GHz
Insertion loss: < 7 dB
Half-wave voltage: < 4.5 V (differential)
DC-ER: > 25 dB
Intensity Modulator Die Chip
3dB-bandwidth: 110 GHz
Insertion loss: < 5 dB
Half-wave voltage: < 3.0 V
DC-ER: > 20 dB
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FAQ
1.What are TFLN chips and how do they differ from traditional photonic chips?
TFLN chips are photonic integrated circuits fabricated on thin-film lithium niobate, offering significantly higher electro-optic bandwidth, lower drive voltage, and lower insertion loss compared to silicon or InP-based optical chips. This makes them ideal for next-generation high-speed optical modulator applications.
2.What bandwidth options are available for Liobate TFLN photonic chips?
Liobate's TFLN photonic chips cover bandwidths from 70GHz to 110GHz, supporting data rates from 800G to 3.2T for data center and coherent telecom applications.
3.Are Liobate TFLN chips compatible with standard optical transceiver form factors?
Yes. Liobate's integrated photonic chips are designed for integration into standard optical transceiver modules, supporting DR8 and ZR coherent configurations for both data center and telecom deployments.
4.What modulation formats do your TFLN chips support?
Liobate's electro-optic modulator chips support intensity modulation, IQ modulation, and polarization-division multiplexed formats — covering both direct detect and coherent transmission requirements.
